RUE003N02TL Rohm Semiconductor, RUE003N02TL Datasheet
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Manufacturer Part Number
RUE003N02TL
Description
MOSFET N-CH 20V 300MA EMT3
Manufacturer
Rohm Semiconductor
Specifications of RUE003N02TL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1 Ohm @ 300mA, 4V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
1V @ 1mA
Input Capacitance (ciss) @ Vds
25pF @ 10V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
700mohm
Rds(on) Test Voltage Vgs
4V
Voltage Vgs Max
8V
Transistor Case Style
EMT
No. Of Pins
3
Svhc
No SVHC
Configuration
Single
Resistance Drain-source Rds (on)
1 Ohm @ 4 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.3 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RUE003N02TLTR
Available stocks
Transistor
1.8V Drive Nch MOSFET
RUM003N02
Silicon N-channel
MOSFET
Switching
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (1.8V) makes this device ideal for
4) Drive circuits can be simple.
5) Parallel use is easy.
Channel to ambient
∗ Each terminal mounted on a recommended land
Type
RUM003N02
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
portable equipment.
Package
Code
Basic ordering unit
(pieces)
Parameter
Parameter
Continuous
Pulsed
Taping
8000
T2L
Symbol
I
V
V
P
Tstg
DP
Tch
DSS
GSS
I
D
D
∗
∗
Rth(ch-a)
2
1
Symbol
−55 to +150
∗
Limits
±300
±600
150
150
20
±8
Limits
833
(1)Base(IN)(Gate)
(2)Emitter(GND)(Source)
(3)Collector(OUT)(Drain)
Dimensions (Unit : mm)
VMT3
mW
Unit
mA
mA
°C
°C
V
V
°C / W
Unit
Abbreviated symbol : QT
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
Gate
∗1
RUM003N02
Rev.B
Source
Drain
∗2
1/3
Related parts for RUE003N02TL
RUE003N02TL Summary of contents
Transistor 1.8V Drive Nch MOSFET RUM003N02 Structure Silicon N-channel MOSFET Applications Switching Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel ...
Transistor Electrical characteristics (Ta=25°C) Symbol Parameter I Gate-source leakage GSS V Drain-source breakdown voltage (BR)DSS I Zero gate voltage drain current DSS V Gate threshold voltage GS(th) Static drain-source on-state R DS(on) resistance |Y Forward transfer admittance C Input capacitance ...
Transistor 10 =1. Pulsed Ta=125°C 75°C 25°C −25°C 1 0.1 0.01 0.1 DRAIN CURRENT : I (A) D Fig.4 Static drain-source on-state resistance vs. drain current (ΙΙΙ) 1000 Ta =25°C =10V =10Ω R ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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