PMV65XP,215 NXP Semiconductors, PMV65XP,215 Datasheet - Page 5

• Manufacturer Part Number: PMV65XP,215
• Description: MOSFET P-CH 20V 3.9A SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of PMV65XP,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 76 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Vgs(th) (max) @ Id: 950mV @ 1mA
• Gate Charge (qg) @ Vgs: 7.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 725pF @ 20V
• Power - Max: 1.92W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.076 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.9 A
• Power Dissipation: 1920 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.076Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2358-2; 934058736215; PMV65XP T/R

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 13993
Product data sheet
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
V
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
plat
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
drain-source breakdown voltage I
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance V
total gate charge
gate-source charge
gate-drain (Miller) charge
plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward)
voltage
Characteristics
Conditions
I
V
V
V
I
Figure 11
V
Figure 13
V
V
I
D
D
D
S
DS
GS
GS
GS
GS
DS
GS
T
T
T
T
T
T
T
T
T
= 1.25 A; V
= 250 A; V
= 1 mA; V
= 2.8 A; V
j
j
j
j
j
j
j
j
j
Rev. 01 — 28 September 2004
= 20 V; V
= 6 V; R
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 12 V; V
= 4.5 V; I
= 25 C
= 150 C
= 2.5 V; I
= 0 V; V
= 4.5 V; R
DS
DS
DS
L
D
D
GS
GS
DS
= 6 ;
= 20 V; f = 1 MHz;
GS
G
= V
= 2.8 A;
= 2.3 A;
= 6 V; V
= 6
= 0 V;
= 0 V
= 0 V
= 0 V
GS
P-channel TrenchMOS™ extremely low level FET
;
Figure 9
Figure 12
GS
Figure 6
Figure 6
= 4.5 V;
and
and
and
10
8
8
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
18
0.55
0.35
Typ
-
-
-
-
-
-
65
104
90
7.6
1.6
0.65
725
105
80
7
21
68
33
0.75
10
1.5
0.77
PMV65XP
Max
-
-
-
76
122
112
-
-
-
-
-
-
-
-
-
-
-
0.95
1.1
1
100
100
1.2
5 of 12
Unit
V
V
V
V
V
nA
m
m
m
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
V
A
A