PMV65XP NXP Semiconductors, PMV65XP Datasheet
PMV65XP
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PMV65XP Summary of contents
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... PMV65XP P-channel TrenchMOS™ extremely low level FET Rev. 01 — 28 September 2004 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Low threshold voltage 1.3 Applications Low power DC-to-DC converters Load switching 1.4 Quick reference data ...
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... 4 100 4 pulsed Figure pulsed Rev. 01 — 28 September 2004 PMV65XP Min - = Figure 2 and 3 - Figure Figure © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... I der (%) 80 40 150 200 Fig 2. Normalized continuous drain current DSon 4 Rev. 01 — 28 September 2004 PMV65XP 100 150 ------------------- 100% der function of solder point temperature 100 100 ms ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 13993 Product data sheet P-channel TrenchMOS™ extremely low level FET Conditions Figure Rev. 01 — 28 September 2004 PMV65XP Min Typ Max - - 65 03ar45 ...
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... A; Figure 2 4 Figure MHz Figure 4 1. Figure Rev. 01 — 28 September 2004 PMV65XP Min Typ Max 0.55 0.75 0. 100 - 10 100 and 104 ...
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... -1 1 (V) DS Fig 6. Drain-source on-state resistance as a function 03ar48 ( DSon Fig 8. Normalized drain-source on-state resistance Rev. 01 — 28 September 2004 PMV65XP drain current; typical values. 2 1.5 1 0 ...
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... Fig 10. Sub-threshold drain current as a function ( Rev. 01 — 28 September 2004 PMV65XP min typ 0 0.2 0.4 0.6 0 gate-source voltage. 03ar51 (nC) G © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 03ar96 ...
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... Product data sheet P-channel TrenchMOS™ extremely low level FET 03ar50 (pF 0.9 1 Fig 13. Input, output and reverse transfer capacitances Rev. 01 — 28 September 2004 PMV65XP MHz function of drain-source voltage; typical values. © ...
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... JEDEC EIAJ TO-236AB Rev. 01 — 28 September 2004 P-channel TrenchMOS™ extremely low level FET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. PMV65XP SOT23 ISSUE DATE 97-02-28 99-09- ...
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... Product data sheet P-channel TrenchMOS™ extremely low level FET Release Data sheet Change date status notice 20040928 Product - data sheet Rev. 01 — 28 September 2004 PMV65XP Doc. number Supersedes 9397 750 13993 - © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
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... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 28 September 2004 PMV65XP © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
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... No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Published in The Netherlands PMV65XP Date of release: 28 September 2004 Document number: 9397 750 13993 ...