PMV31XN,215 NXP Semiconductors, PMV31XN,215 Datasheet - Page 8

• Manufacturer Part Number: PMV31XN,215
• Description: MOSFET N-CH 20V 5.9A SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMV31XN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.9A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 5.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 410pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.037 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.9 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2354-2; 934057678215; PMV31XN T/R; PMV31XN T/R

Philips Semiconductors
9397 750 11066
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
I S
j
= 25 C and 150 C; V
20
15
10
5
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.5
150 C
GS
= 0 V
T j = 25 C
1
V SD (V)
03al73
Rev. 01 — 26 February 2003
1.5
Fig 13. Gate-source voltage as a function of gate
I
V GS
D
(V)
= 6 A; V
5
4
3
2
1
0
charge; typical values.
0
I D = 6 A
T j = 25 C
V DD = 10 V
DD
TrenchMOS™ extremely low level FET
= 10 V
2
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4
PMV31XN
6
Q G (nC)
03al75
8
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