PMV31XN NXP Semiconductors, PMV31XN Datasheet
PMV31XN
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PMV31XN Summary of contents
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... PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Low threshold voltage 1.3 Applications ...
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... °C; pulsed Figure °C; see Figure °C sp All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 PMV31XN N-channel TrenchMOS FET Graphic symbol 017aaa253 Version SOT23 [1] Min Max - kΩ ...
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... T (°C) sp Fig 2. Normalized continuous drain current as a function of solder point temperature DC 1 All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 PMV31XN N-channel TrenchMOS FET 03aa25 50 100 150 T (°C) sp 03al69 μ s 100 μ ...
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... Transient thermal impedance from junction to solder point as a function of pulse duration PMV31XN Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 PMV31XN N-channel TrenchMOS FET Min Typ Max - - 60 03al68 δ ...
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... 4 Ω °C G(ext 1 °C; see Figure 13 All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 PMV31XN N-channel TrenchMOS FET Min Typ Max Unit 1 ...
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... Transfer characteristics: drain current as a function of gate-source voltage; typical values 2 GS (th) (V) 1.5 max 1 typ min 0.5 0 − mA Gate-source threshold voltage as a function of junction temperature PMV31XN 03al72 (V) 03al82 120 180 T (°C) j © NXP B.V. 2011. All rights reserved ...
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... Rev. 2 — 30 November 2011 N-channel TrenchMOS FET 2 a 1.5 1 0 factor as a function of junction temperature function of drain-source voltage; typical values PMV31XN 03af18 120 180 T (°C) j 03al74 C iss C oss C rss (V) © NXP B.V. 2011. All rights reserved ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PMV31XN Product data sheet ( (1) ( 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 PMV31XN N-channel TrenchMOS FET 017aaa376 1.5 V (V) SD © NXP B.V. 2011. All rights reserved ...
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... scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 PMV31XN N-channel TrenchMOS FET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION SOT23 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 PMV31XN N-channel TrenchMOS FET solder lands solder resist solder paste occupied area Dimensions in mm sot023_fr solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering sot023_fw © ...
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... NXP Semiconductors 10. Revision history Table 8. Revision history Document ID Release date PMV31XN v.2 20111130 • Modifications: The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 PMV31XN N-channel TrenchMOS FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 PMV31XN N-channel TrenchMOS FET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMV31XN All rights reserved. Date of release: 30 November 2011 Document identifier: PMV31XN ...