RTL035N03TR Rohm Semiconductor, RTL035N03TR Datasheet
RTL035N03TR
Manufacturer Part Number
RTL035N03TR
Description
MOSFET N-CH 30V 3.5A TUMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.RTL035N03TR.pdf
(3 pages)
Specifications of RTL035N03TR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
56 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
6.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
350pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
TUMT6
Transistor Polarity
N Channel
Continuous Drain Current Id
3.5A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
79mohm
Rds(on) Test Voltage Vgs
4.5V
Voltage Vgs Max
12V
Transistor Case Style
TUMT
No. Of
RoHS Compliant
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.056 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
3.5 A
Power Dissipation
1000 mW
Mounting Style
SMD/SMT
Threshold Voltage Vgs Typ
1.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RTL035N03TR
Manufacturer:
ANADIGICS
Quantity:
10 500
Transistors
2.5V Drive Nch MOSFET
RTL035N03
Silicon N-channel MOSFET
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT6).
3) Low voltage drive (2.5V drive).
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
∗ Mounted on a ceramic board
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Source current
(Body diode)
Type
RTL035N03
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
TR
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
∗1
∗1
∗2
∗
−55 to +150
Limits
Limits
±3.5
125
±14
150
0.8
1.0
30
12
14
Dimensions (Unit : mm)
Inner circuit
TUMT6
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
A
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(6)
(1)
Abbreviated symbol : PM
(5)
(2)
∗2
Rev.A
RTL035N03
∗1
(4)
(3)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
1/2
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RTL035N03TR Summary of contents
Page 1
Transistors 2.5V Drive Nch MOSFET RTL035N03 Structure Silicon N-channel MOSFET Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Applications Switching Packaging specifications Package Taping Type Code Basic ordering unit (pieces) ...
Page 2
Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance Y ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...