RTL035N03TR Rohm Semiconductor, RTL035N03TR Datasheet - Page 2

• Manufacturer Part Number: RTL035N03TR
• Description: MOSFET N-CH 30V 3.5A TUMT6
• Manufacturer: Rohm Semiconductor

Specifications of RTL035N03TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 56 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 6.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 350pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: TUMT6
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 79mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Voltage Vgs Max: 12V
• Transistor Case Style: TUMT
• No. Of: RoHS Compliant
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.056 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1000 mW
• Mounting Style: SMD/SMT
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gd
fs
f
gs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
0.5
30
−
−
−
−
−
3
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
350
4.6
0.8
1.5
40
42
56
90
55
25
32
20
−
−
−
−
−
9
−
Max.
Max.
1.2
1.5
6.4
10
56
59
79
−
1
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
I
D
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
L
G
DD
L
= 0.8A, V
= 1mA, V
= 3.5A, V
=3.5A, V
= 3.5A, V
= 1.75A
= 3.5A
=8.6Ω
=4.3Ω
=10Ω
= 30V, V
= 10V, I
= 10V, I
= 10V
=12V, V
=0V
= 4.5V
15V
15 V
Conditions
Conditions
GS
GS
GS
GS
GS
D
D
DS
GS
V
R
= 1mA
= 4V
= 3.5A
=0V
= 4.5V
= 2.5V
=0V
=0V
GS
G
=0V
=10Ω
= 4.5V
Rev.A
RTL035N03
2/2