RTR020P02TL Rohm Semiconductor, RTR020P02TL Datasheet
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Manufacturer Part Number
RTR020P02TL
Description
MOSFET P-CH 20V 2A TSMT3
Manufacturer
Rohm Semiconductor
Specifications of RTR020P02TL
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
135 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
4.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
430pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
TSMT3
20v 2a Tsmt3
Transistor Polarity
Continuous Drain Current Id
2A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
135mohm
Rds(on) Test Voltage Vgs
-4.5V
Voltage Vgs Max
-12V
Operating Temperature
RoHS Compliant
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.135 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Threshold Voltage Vgs Typ
2V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RTR020P02TLTR
Available stocks
Transistors
Switching (−20V, −2.0A)
RTR020P02
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT3).
Power switching, DC / DC converter.
Silicon P-channel
MOS FET
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Channel to ambient
Source current
(Body diode)
Type
RTR020P02
Application
Features
Structure
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance (Ta=25°C)
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Rth (ch-A)
Taping
Symbol
Symbol
3000
V
V
TL
Tstg
Tch
I
I
P
GSS
I
I
DSS
DP
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
Limits
±2.0
±8.0
−0.8
−3.2
−20
±12
150
125
1.0
°C / W
Unit
Unit
External dimensions (Unit : mm)
°C
°C
W
V
V
A
A
A
A
TSMT3
Abbreviated symbol : TX
0.4
+0.1
−0.05
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
0.95
(1)
2.9±0.1
1.9±0.2
0.95
(3)
(1)
(2)
Each lead has same dimensions
∗1
0.16
RTR020P02
1.0MAX.
0.85±0.1
0.7±0.1
+0.1
−0.06
(3)
(2)
∗2
0~0.1
(1) Gate
(2) Source
(3) Drain
1/4
Related parts for RTR020P02TL
RTR020P02TL Summary of contents
Transistors Switching (−20V, −2.0A) RTR020P02 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). Application Power switching converter. Structure Silicon P-channel MOS FET Packaging specifications Package Taping Type Code Basic ...
Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance Y ...
Transistors Electrical characteristic curves 10 = −10V V DS Pulsed 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.01 0.001 0.5 1.0 1.5 2.0 2.5 GATE-SOURCE VOLTAGE : −V (V) GS Fig.1 Typical Transfer Characteristics 1000 = −4. Pulsed ...
Transistors Measurement circuits D.U. Fig.10 Switching Time Test Circuit (Const.) D.U. Fig.12 Gate Charge Test Circuit ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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