RTR020P02TL Rohm Semiconductor, RTR020P02TL Datasheet - Page 2

• Manufacturer Part Number: RTR020P02TL
• Description: MOSFET P-CH 20V 2A TSMT3
• Manufacturer: Rohm Semiconductor

Specifications of RTR020P02TL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 4.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 430pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: TSMT3
• 20v 2a Tsmt3: Transistor Polarity
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 135mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Voltage Vgs Max: -12V
• Operating Temperature: RoHS Compliant
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.135 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Threshold Voltage Vgs Typ: 2V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RTR020P02TLTR

Transistors
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Body diode characteristics (source-drain characteristics)
Forward voltage
Electrical characteristics (Ta=25°C)
Parameter
V
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gd
fs
f
gs
g
∗
∗
∗
∗
∗
∗
Min.
Min.
−0.7
−20
1.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
100
110
180
430
4.9
1.2
1.3
80
55
11
13
38
12
−
−
−
−
−
−
Max.
Max.
−2.0
−1.2
135
150
250
±10
−1
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
I
V
V
R
R
V
V
I
D
D
D
D
D
D
I
S
GS
DS
DS
DS
DS
GS
DD
GS
L
GS
DD
GS
= −1mA, V
= −2.0A, V
= −2.0A, V
= −1.0A, V
= −1.0A
= −2.0A
= −0.8A, V
=15Ω
= −20V, V
= −10V, I
= −10V, I
= −10V
=±12V, V
=0V
= −4.5V
=10Ω
= −4.5V
−15V
−15 V
Conditions
Conditions
GS
GS
GS
GS
D
D
GS
DS
GS
= −1mA
= −1.0A
=0V
= −4.5V
= −4.0V
= −2.5V
=0V
=0V
=0V
RTR020P02
2/4