PSMN5R0-30YL,115 NXP Semiconductors, PSMN5R0-30YL,115 Datasheet - Page 7
![MOSFET N-CH 30V 84A LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
PSMN5R0-30YL,115
Manufacturer Part Number
PSMN5R0-30YL,115
Description
MOSFET N-CH 30V 84A LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN5R0-30YL115.pdf
(14 pages)
Specifications of PSMN5R0-30YL,115
Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
84A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1760pF @ 12V
Power - Max
61W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
91 A
Power Dissipation
61 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4684-2
934063075115
PSMN5R0-30YL T/R
934063075115
PSMN5R0-30YL T/R
NXP Semiconductors
PSMN5R0-30YL
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
10
10
10
10
10
10
3000
2000
1000
(pF)
(A)
I
C
D
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Input and reverse transfer capacitances as a
0
0
C
iss
2
C
rss
min
1
4
6
typ
2
V
All information provided in this document is subject to legal disclaimers.
8
GS
003aab271
003aac556
V
max
(V)
GS
(V)
10
3
Rev. 4 — 9 March 2011
N-channel 30 V 5 mΩ logic level MOSFET in LFPAK
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source threshold voltage as a function of
V
R
(mΩ)
GS (th)
(V)
DSon
7
6
5
4
3
3
2
1
0
-60
of gate-source voltage; typical values
junction temperature
2
0
4
PSMN5R0-30YL
max
typ
min
60
6
120
8
© NXP B.V. 2011. All rights reserved.
003aac549
V
003a a c337
T
GS
j
(°C)
(V)
180
10
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