psmn5r0-100bs NXP Semiconductors, psmn5r0-100bs Datasheet

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psmn5r0-100bs

Manufacturer Part Number
psmn5r0-100bs
Description
Psmn5r0-100bs N-channel 100 V 5 M?? Standard Level Mosfet In D2pak
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
Table 1.
Symbol
V
P
T
Static characteristics
R
I
D
j
DS
tot
DSon
PSMN5R0-100BS
N-channel 100 V 5 mΩ standard level MOSFET in D2PAK
Rev. 01 — 24 December 2010
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
junction
temperature
drain-source
on-state
resistance
Conditions
T
T
see
T
V
T
V
T
j
mb
mb
j
j
GS
GS
≥ 25 °C; T
= 100 °C; see
= 25 °C; see
Figure 1
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
j
D
D
≤ 175 °C
GS
= 25 A;
= 25 A;
Figure 13
Figure 12
Figure 2
= 10 V;
Suitable for standard level gate drive
sources
Motor control
Server power supplies
[1]
Objective data sheet
Min
-
-
-
-55
-
-
Typ
-
-
-
-
6.8
4.3
Max Unit
100
120
306
175
8
5
V
A
W
°C
mΩ
mΩ

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psmn5r0-100bs Summary of contents

Page 1

... PSMN5R0-100BS N-channel 100 V 5 mΩ standard level MOSFET in D2PAK Rev. 01 — 24 December 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... R GS Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 01 — 24 December 2010 PSMN5R0-100BS Min = Figure 14 °C; - j(init) ≤ 100 V; sup Graphic symbol ...

Page 3

... P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 01 — 24 December 2010 PSMN5R0-100BS Min - = 20 kΩ -20 Figure 1 - [1] Figure ° -55 -55 - ...

Page 4

... N-channel 100 V 5 mΩ standard level MOSFET in D2PAK = Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 01 — 24 December 2010 PSMN5R0-100BS 003aaf734 =10 μ 100 μ 100 (V) DS Min Typ - 0 ...

Page 5

... °C; see Figure 0.67 Ω 4.7 Ω °C G(ext All information provided in this document is subject to legal disclaimers. Rev. 01 — 24 December 2010 PSMN5R0-100BS Min Typ Max Unit 100 - - ...

Page 6

... V (V) GS Fig 8. Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 24 December 2010 PSMN5R0-100BS Min Typ Max - 0.8 1 235 - 003aaf724 = 175 ° ° C ...

Page 7

... V (V) GS Fig 10. Sub-threshold drain current as a function of 003aad280 a 120 180 T (°C) j Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 01 — 24 December 2010 PSMN5R0-100BS −1 min typ −2 −3 −4 −5 − gate-source voltage 2 ...

Page 8

... I (A) D Fig 14. Gate charge waveform definitions 003aaf729 150 200 Q (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 01 — 24 December 2010 PSMN5R0-100BS GS(pl) V GS(th GS1 GS2 ...

Page 9

... N-channel 100 V 5 mΩ standard level MOSFET in D2PAK 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 01 — 24 December 2010 PSMN5R0-100BS 003aaf731 = 25 ° C 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...

Page 10

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 01 — 24 December 2010 PSMN5R0-100BS mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. SOT404 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN5R0-100BS v.1 20101224 PSMN5R0-100BS Objective data sheet N-channel 100 V 5 mΩ standard level MOSFET in D2PAK Data sheet status Change notice Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 24 December 2010 ...

Page 12

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 01 — 24 December 2010 PSMN5R0-100BS © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 24 December 2010 PSMN5R0-100BS Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 24 December 2010 Document identifier: PSMN5R0-100BS ...

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