PSMN012-60YS,115 NXP Semiconductors, PSMN012-60YS,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN012-60YS,115
• Description: MOSFET N-CH 60V 59A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-60YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.1 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 1685pF @ 30V
• Power - Max: 89W
• Mounting Type: Surface Mount
• Gate Charge Qg: 28.4 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 17.8 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 59 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4977-2

NXP Semiconductors
Table 6.
PSMN012-60YS_1
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(pF)
(A)
C
4000
2000
I
D
100
80
60
40
20
0
0
function of drain-source voltage; typical values
function of gate-source voltage, typical values
Output characteristics: drain current as a
Input and reverse transfer capacitances as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
V
GS
(V) = 10
2.5
1
…continued
7
5
2
Conditions
I
I
V
S
S
DS
7.5
= 15 A; V
= 10 A; dI
All information provided in this document is subject to legal disclaimers.
V
= 30 V
6
003aad859
003aad862
DS
V
GS
(V)
C
C
(V)
5.5
iss
rss
5
4
GS
Rev. 01 — 5 January 2010
10
S
3
/dt = -100 A/µs; V
= 0 V; T
N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET
j
= 25 °C; see
Fig 6.
Fig 8.
(mΩ)
R
DSon
(S)
g
GS
fs
60
40
20
40
32
24
16
0
8
0
= 0 V;
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
4
Figure 17
8
20
PSMN012-60YS
Min
-
-
-
12
Typ
0.82
35
41
40
16
© NXP B.V. 2010. All rights reserved.
I
V
003aad861
D
003aad865
GS
(A)
Max
1.2
-
-
(V)
60
20
Unit
V
ns
nC
7 of 15