PSMN012-60YS,115 NXP Semiconductors, PSMN012-60YS,115 Datasheet - Page 8

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PSMN012-60YS,115

Manufacturer Part Number
PSMN012-60YS,115
Description
MOSFET N-CH 60V 59A LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN012-60YS,115

Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11.1 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
59A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28.4nC @ 10V
Input Capacitance (ciss) @ Vds
1685pF @ 30V
Power - Max
89W
Mounting Type
Surface Mount
Gate Charge Qg
28.4 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
17.8 mOhms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
59 A
Power Dissipation
89 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4977-2
NXP Semiconductors
PSMN012-60YS_1
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
50
40
30
20
10
5
4
3
2
1
0
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0
2
T
j
= 175 °C
60
max
min
typ
4
120
T
j
= 25 °C
V
All information provided in this document is subject to legal disclaimers.
GS
003aad280
T
003aad860
j
(V)
(°C)
180
Rev. 01 — 5 January 2010
6
N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
2.4
1.6
1.2
0.8
0.4
−1
−2
−3
−4
−5
−6
2
0
gate-source voltage
-60
factor as a function of junction temperature.
0
0
2
PSMN012-60YS
min
60
typ
4
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aad696
T
j
(V)
(°C)
03aa35
180
6
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