PSMN4R5-40PS,127 NXP Semiconductors, PSMN4R5-40PS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN4R5-40PS,127
• Description: MOSFET N-CH 40V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R5-40PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 42.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 2683pF @ 12V
• Power - Max: 148W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 148 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4895-5; 934063908127

NXP Semiconductors
PSMN4R5-40PS_2
Product data sheet
Fig 7.
Fig 9.
100
100
(S)
g
(A)
75
50
25
I
80
60
40
20
fs
D
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
25
2
T
j
= 175 °C
50
4
25 °C
75
6
V
003aad022
003aad027
I
D
GS
(A)
(V)
100
8
Rev. 02 — 25 June 2009
Fig 8.
Fig 10. Drain-source on-state resistance as a function
4000
(pF)
3000
2000
1000
R
(mΩ)
N-channel 40 V 4.6 mΩ standard level MOSFET
C
DSon
25
20
15
10
0
5
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Input and reverse transfer capacitances as a
0
0
C
C
rss
iss
2
5
PSMN4R5-40PS
4
10
6
15
© NXP B.V. 2009. All rights reserved.
8
V
003aad026
003aad028
GS
V
GS
(V)
(V)
10
20
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