PSMN4R5-40PS,127 NXP Semiconductors, PSMN4R5-40PS,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN4R5-40PS,127
• Description: MOSFET N-CH 40V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R5-40PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 42.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 2683pF @ 12V
• Power - Max: 148W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 148 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4895-5; 934063908127

NXP Semiconductors
PSMN4R5-40PS_2
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
10
GS
8
6
4
2
0
charge; typical values
0
10
V
20
DS
= 20V
30
100
(A)
I
80
60
40
20
S
0
0
40
003aad024
Q
G
(nC)
0.2
50
Rev. 02 — 25 June 2009
0.4
175 °C
Fig 16. Input, output and reverse transfer capacitances
0.6
(pF)
N-channel 40 V 4.6 mΩ standard level MOSFET
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
0.8
T
-1
j
003aad023
= 25 °C
V
SD
(V)
1
1
PSMN4R5-40PS
C
C
C
rss
iss
oss
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aad025
(V)
10
2
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