PSMN2R2-40PS,127 NXP Semiconductors, PSMN2R2-40PS,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN2R2-40PS,127
• Description: MOSFET N-CH 40V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R2-40PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 8423pF @ 20V
• Power - Max: 306W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 306 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4898-5; 934063915127

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN2R2-40PS_2
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-mb)
Z
(K/W)
th (j-mb)
10
10
10
10
10
10
10
(A)
10
I
-1
-2
-3
-4
D
4
3
2
1
1
10
10
Safe operating area; continuouse and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
10
-5
Conditions
see
10
Limit R
-4
Figure 4
(1)
DSon
1
= V
Rev. 02 — 28 September 2009
DS
/ I
10
D
-3
10
N-channel 40 V 2.1 mΩ standard level MOSFET
-2
10
DC
10
-1
PSMN2R2-40PS
Min
-
P
V
DS
1
Typ
0.25
(V)
t
p
1 ms
10 μs
100 μs
10 ms
100 ms
T
© NXP B.V. 2009. All rights reserved.
t
p
(s)
003aad316
003aad100
δ =
Max
0.5
T
t
p
t
10
10
2
Unit
K/W
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