PSMN2R2-40BS,118 NXP Semiconductors, PSMN2R2-40BS,118 Datasheet

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PSMN2R2-40BS,118

Manufacturer Part Number
PSMN2R2-40BS,118
Description
MOSFET Std N-chanMOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN2R2-40BS118.pdf (15 pages)

Specifications of PSMN2R2-40BS,118

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Resistance Drain-source Rds (on)
2.2 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Power Dissipation
306 W
Factory Pack Quantity
800
1. Product profile
Table 1.
[1]
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
Continuous current is limited by package
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state resistance
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
PSMN2R2-40BS
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
Rev. 1 — 20 March 2012
High efficiency due to low switching
and conduction losses
DC-to-DC convertors
Load switching
T
Conditions
T
T
see
V
see
V
see
V
see
V
I
R
D
j
mb
mb
GS
GS
GS
GS
GS
≥ 25 °C; T
= 100 A; V
Figure 1
Figure 6
Figure
Figure
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; T
= 50 Ω
6; see
14; see
j
D
D
D
sup
≤ 175 °C
j(init)
GS
= 25 A; T
= 25 A; T
= 25 A; V
≤ 40 V; unclamped;
Figure 2
= 10 V;
Figure 13
= 25 °C;
Figure 15
j
j
DS
= 100 °C;
= 25 °C;
= 20 V;
Suitable for standard level gate drive
sources
Motor control
Server power supplies
[1]
Min
-
-
-
-55
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
2.73
1.88
25
130
-
175
Max
40
100
306
3.2
2.2
-
-
1.24
Unit
V
A
W
°C
mΩ
mΩ
nC
nC
J

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PSMN2R2-40BS,118 Summary of contents

Page 1

... PSMN2R2-40BS N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  ...

Page 2

... SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Marking code PSMN2R2-40BS All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R2-40BS Graphic symbol mbb076 Version SOT404 © NXP B.V. 2012. All rights reserved ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R2-40BS Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure 1 - Figure -55 -55 - [1] ...

Page 4

... PSMN2R2-40BS Product data sheet N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK Limit DSon DS D (1) 1 All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R2-40BS 003aad316 = 10 μ 100 μ 100 © NXP B.V. 2012. All rights reserved. ...

Page 5

... Product data sheet N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK Conditions see Figure 4 Minimum foot print; mounted in a printed circuit board - All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R2-40BS Min Typ Max - 0.25 0 003aad100 t p δ ...

Page 6

... D DS see Figure MHz °C; see Figure 0.25 Ω 1.5 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R2-40BS Min Typ Max 4 0. ...

Page 7

... /dt = -100 A/µ 003aad116 ( (V) DS Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R2-40BS Min Typ = 25 ° 53.7 - 80. ° ( DSon (mΩ ...

Page 8

... I (A) D Fig 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R2-40BS - 003aad124 © NXP B.V. 2012. All rights reserved. 003aad122 C iss ...

Page 9

... T (°C) j Fig 12. Sub-threshold drain current as a function of gate-source voltage 003aad326 120 180 ( ° Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R2-40BS min typ max GS(pl) ...

Page 10

... 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R2-40BS function of drain-source voltage; typical values 003aad119 25 °C 0 (V) sd © NXP B.V. 2012. All rights reserved. 003aad121 ...

Page 11

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R2-40BS mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved. SOT404 ...

Page 12

... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN2R2-40BS v.1 20120320 PSMN2R2-40BS Product data sheet N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R2-40BS © NXP B.V. 2012. All rights reserved ...

Page 14

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R2-40BS © NXP B.V. 2012. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 20 March 2012 Document identifier: PSMN2R2-40BS ...

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