IRFHM9331TR2PBF International Rectifier, IRFHM9331TR2PBF Datasheet - Page 2

• Manufacturer Part Number: IRFHM9331TR2PBF
• Description: MOSFET P-CH 30V 11A 3X3 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHM9331TR2PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.6 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 1543pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 0.01ohm
• Rds(on) Test Voltage Vgs: -20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: QFN
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: - 24 A
• Power Dissipation: 2.8 W
• Gate Charge Qg: 16 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFHM9331TR2PBFTR

Notes:

‚
ƒ
„
…
†
‡
.
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
R
R
R
Static @ T
Avalanche Characteristics
Diode Characteristics
Thermal Resistance
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
DS(on)
GS(th)
G
iss
oss
rss
AS
SD
θJC
θJA
θJA
g
g
gs
gd
rr
GS(th)
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
R
Current limited by package.
For DESIGN AID ONLY, not subject to production testing.
2
DSS
Starting T
DSS
θ
is measured at T
/∆T
J
J
= 25°C, L = 1.904mH, R
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (t<10s)
Parameter
J
of approximately 90°C.
Ù
Parameter
Parameter
Parameter
g
™
f
G
= 50Ω, I
f
AS
d
= -9A.
Min.
Min.
-1.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
16
Typ.
1543
Typ.
0.02
10.0
11.7
–––
-1.8
-5.1
–––
–––
–––
–––
–––
310
208
–––
–––
–––
4.4
16
32
16
11
27
72
60
64
25
8
Typ.
Max.
Typ.
Max.
–––
–––
–––
–––
14.6
-150
–––
–––
–––
-2.4
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-2.8
-1.2
-10
-90
10
48
96
38
mV/°C
Units
Units
V/°C
mΩ
nC
nC
nC
µA
µA
pF
ns
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
V
I
R
See Figs. 19a & 19b
V
V
ƒ = 1.0KHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100/µs
D
D
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
J
J
G
= -9.0A
= -1.0A
= 25°C, I
= 25°C, I
= 6.8Ω
= V
= -24V, V
= -24V, V
= -10V, I
= -15V,V
= -15V
= -25V
= 0V, I
= -20V, I
= -10V, I
= -25V
= 25V
= -10V
= -15V, V
= 0V
GS
Max.
Max.
-9.0
, I
76
45
30
D
6
Conditions
Conditions
D
S
F
= -250µA
D
D
D
GS
= -25µA
= -2.8A, V
GS
GS
= -2.8A, V
GS
e
= -9.0A
= -11A
= -11A
= -4.5V,I
= 0V
= 0V, T
= -4.5V
www.irf.com
D
e
e
= -1mA
G
J
GS
DD
D
e
= 125°C
= - 9.0A
= -24V
Units
Units
°C/W
= 0V
mJ
A
D
S
e