IRFHM9331TR2PBF International Rectifier, IRFHM9331TR2PBF Datasheet - Page 5
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IRFHM9331TR2PBF
Manufacturer Part Number
IRFHM9331TR2PBF
Description
MOSFET P-CH 30V 11A 3X3 PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFHM9331TR2PBF.pdf
(8 pages)
Specifications of IRFHM9331TR2PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14.6 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
48nC @ 10V
Input Capacitance (ciss) @ Vds
1543pF @ 25V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
8-PowerVQFN
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
0.01ohm
Rds(on) Test Voltage Vgs
-20V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
QFN
Rohs Compliant
Yes
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
- 24 A
Power Dissipation
2.8 W
Gate Charge Qg
16 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFHM9331TR2PBFTR
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
350
300
250
200
150
100
+
Fig 12. On-Resistance vs. Gate Voltage
-
50
30
25
20
15
10
0
5
25
0
D.U.T
Starting T J , Junction Temperature (°C)
-V GS, Gate -to -Source Voltage (V)
Fig 16.
*
50
5
+
-
•
•
•
•
SD
75
10
T J = 125°C
T J = 25°C
•
•
•
100
TOP
BOTTOM -9.0A
15
-
G
I D = -11A
125
+
20
I D
-1.9A
-2.9A
150
+
-
25
Re-Applied
Voltage
Reverse
Recovery
Current
for P-Channel HEXFET
Fig 13. Typical On-Resistance vs. Drain Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
1000
800
600
400
200
100
0
80
60
40
20
P.W.
1E-5
SD
0
DS
Waveform
Waveform
0
Fig 15. Typical Power vs. Time
Ripple ≤ 5%
Body Diode
Vgs = -4.5V
Period
Body Diode Forward
1E-4
20
Diode Recovery
Current
-I D , Drain Current (A)
dv/dt
Forward Drop
1E-3
di/dt
Time (sec)
40
®
Power MOSFETs
Vgs = -10V
D =
1E-2
60
Period
P.W.
1E-1
80
V
V
I
SD
GS
DD
=10V
1E+0
100
5