IRFHM9331TR2PBF International Rectifier, IRFHM9331TR2PBF Datasheet - Page 8

• Manufacturer Part Number: IRFHM9331TR2PBF
• Description: MOSFET P-CH 30V 11A 3X3 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHM9331TR2PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.6 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 1543pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 0.01ohm
• Rds(on) Test Voltage Vgs: -20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: QFN
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: - 24 A
• Power Dissipation: 2.8 W
• Gate Charge Qg: 16 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFHM9331TR2PBFTR

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††† Applicable version of JEDEC standard at the time of product release.
PQFN Tape and Reel
Qualification information
Qualification level
Moisture Sensitivity Level
RoHS compliant
8
Higher qualification ratings may be available should the user have such requirements.
Qualification standards can be found at International Rectifier’s web site
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
http://www.irf.com/product-info/reliability
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
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PQFN 3mm x 3mm
(per JE DE C JE S D47F
Visit us at www.irf.com for sales contact information.06/2010
Data and specifications subject to change without notice.
Cons umer
(per IPC/JE DE C J-S T D-020D
Yes
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guidelines )
MS
L1
TAC Fax: [phone]
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)
www.irf.com