IRF7456TRPBF International Rectifier, IRF7456TRPBF Datasheet

MOSFET N-CH 20V 16A 8-SOIC

IRF7456TRPBF

Manufacturer Part Number
IRF7456TRPBF
Description
MOSFET N-CH 20V 16A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7456TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.5 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 5V
Input Capacitance (ciss) @ Vds
3640pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.5 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
16 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
41 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7456PBFTR
IRF7456TRPBF
IRF7456TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7456TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7456TRPBF
Quantity:
9 000
Company:
Part Number:
IRF7456TRPBF
Quantity:
10 420
Absolute Maximum Ratings
l
l
Thermal Resistance
Typical SMPS Topologies
l
www.irf.com
l
l
l
Applications
Benefits
Symbol
V
V
I
I
I
P
P
T
R
D
D
DM
J
DS
GS
D
D
θJA
@ T
@ T
, T
Lead-Free
and Current
@T
@T
High Frequency DC-DC Converters
Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
with Synchronous Rectification
Ultra-Low R
Low Charge and Low Gate Impedance to
Fully Characterized Avalanche Voltage
Reduce Switching Losses
STG
A
A
A
A
 through „ are on page 8
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Linear Derating Factor
Gate-to-Source Voltage
at 4.5V V
Parameter
Parameter
GS

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
G
S
S
S
V
1
2
3
20V
4
DSS
Top View
HEXFET
8
6
5
7
-55 to + 150
R
Max.
D
D
D
A
D
50
Max.
DS(on)
A
130
± 12
2.5
1.6
0.02
20
16
13
0.0065Ω
IRF7456PbF
®
Power MOSFET
max
SO-8
Units
Units
W/°C
°C/W
16A
°C
W
W
I
V
A
V
D
1

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IRF7456TRPBF Summary of contents

Page 1

Applications High Frequency DC-DC Converters l with Synchronous Rectification Lead-Free l Benefits Ultra-Low DS(on) Low Charge and Low Gate Impedance to l Reduce Switching Losses Fully Characterized Avalanche Voltage l and Current Absolute Maximum Ratings ...

Page 2

IRF7456PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 4.5V 3.0V 2.7V 2.5V 100 2.25V BOTTOM 2. 20µs PULSE WIDTH 2. 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100.0 ...

Page 4

IRF7456PbF 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 C oss 2000 1000 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...

Page 6

IRF7456PbF 0.0062 4.5V 0.0058 0.0054 0.0050 10V 0.0046 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50KΩ GS .2µF ...

Page 7

SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches & !$Ãb dà ! " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# ...

Page 8

IRF7456PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES ...

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