IRF6604 International Rectifier, IRF6604 Datasheet - Page 10
![MOSFET N-CH 30V 12A DIRECTFET](/photos/5/49/54926/irf6604_sml.jpg)
IRF6604
Manufacturer Part Number
IRF6604
Description
MOSFET N-CH 30V 12A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6604.pdf
(13 pages)
Specifications of IRF6604
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.5 mOhm @ 12A, 7V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.1V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
2270pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MQ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IRF6604TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6604
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF6604 (94-3250)-Q
Manufacturer:
IR
Quantity:
7 383
Company:
Part Number:
IRF6604TR1
Manufacturer:
MOLEX
Quantity:
1 000
Part Number:
IRF6604TR1
Manufacturer:
IR
Quantity:
20 000
DirectFET Substrate and PCB Layout, MQ Outline
(MediumSize Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
10
D
D
G
S
S
D = DRAIN
G = GATE
S = SOURCE
D
D
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