IRF6604 International Rectifier, IRF6604 Datasheet - Page 9
![MOSFET N-CH 30V 12A DIRECTFET](/photos/5/49/54926/irf6604_sml.jpg)
IRF6604
Manufacturer Part Number
IRF6604
Description
MOSFET N-CH 30V 12A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6604.pdf
(13 pages)
Specifications of IRF6604
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.5 mOhm @ 12A, 7V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.1V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
2270pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MQ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IRF6604TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6604
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF6604 (94-3250)-Q
Manufacturer:
IR
Quantity:
7 383
Company:
Part Number:
IRF6604TR1
Manufacturer:
MOLEX
Quantity:
1 000
Part Number:
IRF6604TR1
Manufacturer:
IR
Quantity:
20 000
www.irf.com
DirectFET Outline Dimension, MQ Outline
(Medium Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
1.57
MIN
6.25
4.80
3.85
0.35
0.68
0.68
0.69
0.57
0.23
2.95
0.59
0.03
0.08
METRIC
DIMENSIONS
MAX
5.05
3.95
0.45
0.72
0.72
0.73
0.61
0.27
1.70
3.12
0.70
0.08
0.17
6.35
0.246
0.189
0.152
0.014
0.027
0.027
0.027
0.022
0.009
0.062
0.116
0.023
0.001
0.003
MIN
IMPERIAL
0.250
0.199
0.156
0.018
0.028
0.028
0.029
0.024
0.011
0.067
0.123
0.028
0.003
0.007
MAX
9