IRF6604 International Rectifier, IRF6604 Datasheet - Page 12

• Manufacturer Part Number: IRF6604
• Description: MOSFET N-CH 30V 12A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6604

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11.5 mOhm @ 12A, 7V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2270pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MQ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6604TR

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Notes:
12
DirectFET™ Part Marking
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
R
max. junction temperature.
Starting T
G
= 25Ω, I
J
= 25°C, L = 0.70mH
AS
= 9.6A.
This product has been designed and qualified for the Consumer market.
Visit us at www.irf.com for sales contact information. 11/05
„
…
†
‡
ˆ
Data and specifications subject to change without notice.
R
T
part.
Surface mounted on 1 in. square Cu board.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Qualification Standards can be found on IR’s Web site.
C
θ
is measured at
measured with thermal couple mounted to top (Drain) of
J
TAC Fax: [phone]
www.irf.com