IRFZ24NPBF International Rectifier, IRFZ24NPBF Datasheet
IRFZ24NPBF
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IRFZ24NPBF Summary of contents
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... Fifth Generation HEXFET power MOSFETs International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications ...
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‚ Ω Ω ƒ ≤ ≤ ≤ „ ≤ „ „ Ω Ω, „ „ „ ≤ ≤ www.irf.com ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 4.5V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage ( 100 T = 25° ...
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1MHz iss 600 rss oss iss 500 C oss 400 300 ...
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T , Case Temperature (° 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 www.irf.com V 90% A 125 150 ...
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V DS D.U. Charge 6 L 140 120 + 100 0.01Ω V (BR)DSS V DD TOP BOTTOM ...
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Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...
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Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...