IRFZ24NPBF International Rectifier, IRFZ24NPBF Datasheet - Page 4

• Manufacturer Part Number: IRFZ24NPBF
• Description: MOSFET N-CH 55V 17A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ24NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 370pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 17 A
• Gate Charge, Total: 20 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 45 W
• Resistance, Drain To Source On: 0.07 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 19 ns
• Time, Turn-on Delay: 4.9 ns
• Transconductance, Forward: 4.5 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Mounting Style: Through Hole
• Gate Charge Qg: 13.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ24NPBF

4
100
700
600
500
400
300
200
100
10
1
0
0.4
1
0.6
C
C
C
T = 175°C
V
rss
V
iss
oss
J
SD
DS
0.8
V
C
C
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
1.0
gs
gd
ds
T = 25°C
J
+ C
+ C
1.2
10
gd
gd
f = 1MHz
, C
1.4
ds
1.6
SHORTED
V
GS
1.8
= 0V
100
2.0
A
A
1000
100
20
16
12
10
8
4
0
1
0
1
I
T
T
Single Pulse
D
C
J
= 10A
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
4
G
, Drain-to-Source Voltage (V)
8
BY R
V
V
10
DS
DS
DS(on)
= 44V
= 28V
FOR TEST CIRCUIT
12
SEE FIGURE 13
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16
10µs
100µs
1ms
10ms
100
20
A
A