IRFZ24NPBF International Rectifier, IRFZ24NPBF Datasheet - Page 7
![MOSFET N-CH 55V 17A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFZ24NPBF
Manufacturer Part Number
IRFZ24NPBF
Description
MOSFET N-CH 55V 17A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFZ24NPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
370pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
17 A
Gate Charge, Total
20 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
45 W
Resistance, Drain To Source On
0.07 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
19 ns
Time, Turn-on Delay
4.9 ns
Transconductance, Forward
4.5 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
17 A
Mounting Style
Through Hole
Gate Charge Qg
13.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFZ24NPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFZ24NPBF
Manufacturer:
IR
Quantity:
9 895
Part Number:
IRFZ24NPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
For N-Channel HEXFET
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
®
power MOSFETs
D =
-
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
7