STP55NF06 STMicroelectronics, STP55NF06 Datasheet - Page 3
![MOSFET N-CH 60V 50A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP55NF06
Manufacturer Part Number
STP55NF06
Description
MOSFET N-CH 60V 50A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP55NF06.pdf
(18 pages)
Specifications of STP55NF06
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 27.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
18 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
110000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Dc
1120
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2777-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP55NF06
Manufacturer:
ST
Quantity:
4 250
Company:
Part Number:
STP55NF06
Manufacturer:
ST-MICROE
Quantity:
3 107
Company:
Part Number:
STP55NF06
Manufacturer:
ST
Quantity:
86 755
Part Number:
STP55NF06
Manufacturer:
ST
Quantity:
20 000
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
1
Electrical ratings
Table 1.
1. Refer to soa for the max allowable current value on FP-type due to Rth value
2. Pulse width limited by safe operating area.
3. Starting Tj = 25°C, V
4. I
Table 2.
1. for 10 sec. 1.6mm from case
Rthj-case
Rthj-amb
Symbol
dv/dt
SD
E
I
V
DM
V
V
T
P
AS
T
I
I
T
ISO
≤ 50A, di/dt ≤ 400A/µs, V
GS
DS
stg
J
D
D
tot
j
(2)
(3)
(4)
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Single pulse avalanche energy
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Storage temperature
Max. operating junction temperature
DD
(1)
= 30V, I
DD
≤ V
(BR)DSS
D
Parameter
=25A
C
, Tj ≤ T
= 25°C
GS
= 0)
JMAX
C
C
= 25°C
= 100°C
TO-220
D
I
2
0.73
2
200
110
PAK
50
35
PAK
TO-220
D
-
I
2
1.36
2
PAK
PAK
-55 to 175
Value
± 20
340
60
7
62.5
300
TO-220FP
TO-220FP
Electrical ratings
200
2500
50
35
0.20
30
5
(1)
(1)
(1)
°C/W
°C/W
W/°C
V/ns
Unit
°C
mJ
°C
W
V
V
V
A
A
A
3/18