STP55NF06 STMicroelectronics, STP55NF06 Datasheet - Page 7
![MOSFET N-CH 60V 50A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP55NF06
Manufacturer Part Number
STP55NF06
Description
MOSFET N-CH 60V 50A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP55NF06.pdf
(18 pages)
Specifications of STP55NF06
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 27.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
18 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
110000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Dc
1120
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2777-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP55NF06
Manufacturer:
ST
Quantity:
4 250
Company:
Part Number:
STP55NF06
Manufacturer:
ST-MICROE
Quantity:
3 107
Company:
Part Number:
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Manufacturer:
ST
Quantity:
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Part Number:
STP55NF06
Manufacturer:
ST
Quantity:
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STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Figure 7.
Figure 9.
Figure 11. Normalized gate threshold voltage
Transconductance
Gate charge vs gate-source voltage Figure 10. Capacitance variations
vs temperature
Figure 8.
Figure 12. Normalized on resistance vs
Static drain-source on resistance
temperature
Electrical characteristics
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