STP55NF06 STMicroelectronics, STP55NF06 Datasheet - Page 9
![MOSFET N-CH 60V 50A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP55NF06
Manufacturer Part Number
STP55NF06
Description
MOSFET N-CH 60V 50A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP55NF06.pdf
(18 pages)
Specifications of STP55NF06
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 27.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
18 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
110000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Dc
1120
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2777-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP55NF06
Manufacturer:
ST
Quantity:
4 250
Company:
Part Number:
STP55NF06
Manufacturer:
ST-MICROE
Quantity:
3 107
Company:
Part Number:
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Manufacturer:
ST
Quantity:
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STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
3
Figure 14. Switching times test circuit for
Figure 16. Test circuit for inductive load
Figure 18. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 15. Gate charge test circuit
Figure 17. Unclamped Inductive load test
Figure 19. Switching time waveform
circuit
Test circuit
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