IRF540ZPBF International Rectifier, IRF540ZPBF Datasheet - Page 3
![MOSFET N-CH 100V 36A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF540ZPBF
Manufacturer Part Number
IRF540ZPBF
Description
MOSFET N-CH 100V 36A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF540ZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26.5 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1770pF @ 25V
Power - Max
92W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Application
For automotive applications
Channel Type
N-Channel
Current, Drain
36 A
Fall Time
39 ns (Typ.)
Gate Charge, Total
42 nC
Mounting And Package Type
PCB Mount and TO-220AB Package
Operating And Storage Temperature
-55 to +175 °C (Max.)
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
92 W
Resistance, Drain To Source On
21 Milliohms
Resistance, Thermal, Junction To Case
1.64 °C⁄W (Max.)
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Rise
51 ns (Typ.)
Time, Turn-off Delay
43 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
36 V
Voltage, Breakdown, Drain To Source
100 V
Voltage, Diode Forward
1.3 V (Typ.)
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
36 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF540ZPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF540ZPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
1000
1000
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
100
10
10
1
1
4.0
0.1
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 175°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T J = 25°C
4.5V
5.0
1
60µs PULSE WIDTH
Tj = 25°C
V DS = 25V
60µs PULSE WIDTH
6.0
10
100
7.0
1000
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
100
10
80
60
40
20
1
0
0.1
0
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
10
Vs. Drain Current
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
1
20
V DS = 10V
380µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
4.5V
30
T J = 175°C
10
10
T J = 25°C
40
3
100
100
50