IRF540ZPBF International Rectifier, IRF540ZPBF Datasheet - Page 4
![MOSFET N-CH 100V 36A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF540ZPBF
Manufacturer Part Number
IRF540ZPBF
Description
MOSFET N-CH 100V 36A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF540ZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26.5 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1770pF @ 25V
Power - Max
92W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Application
For automotive applications
Channel Type
N-Channel
Current, Drain
36 A
Fall Time
39 ns (Typ.)
Gate Charge, Total
42 nC
Mounting And Package Type
PCB Mount and TO-220AB Package
Operating And Storage Temperature
-55 to +175 °C (Max.)
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
92 W
Resistance, Drain To Source On
21 Milliohms
Resistance, Thermal, Junction To Case
1.64 °C⁄W (Max.)
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Rise
51 ns (Typ.)
Time, Turn-off Delay
43 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
36 V
Voltage, Breakdown, Drain To Source
100 V
Voltage, Diode Forward
1.3 V (Typ.)
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
36 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF540ZPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF540ZPBF
Manufacturer:
IR
Quantity:
20 000
4
1000.0
100.0
3000
2500
2000
1500
1000
10.0
500
1.0
0.1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T J = 175°C
0.4
V SD , Source-toDrain Voltage (V)
Ciss
Coss
Crss
V DS , Drain-to-Source Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
T J = 25°C
0.8
f = 1 MHZ
10
1.0
V GS = 0V
1.2
1.4
100
1000
100
0.1
20
16
12
10
Fig 8. Maximum Safe Operating Area
8
4
0
1
Fig 6. Typical Gate Charge Vs.
0
1
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 22A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
20
10
V DS = 80V
VDS= 50V
VDS= 20V
30
FOR TEST CIRCUIT
SEE FIGURE 13
100
www.irf.com
40
10msec
1msec
100µsec
50
1000
60