IRF3710ZPBF International Rectifier, IRF3710ZPBF Datasheet - Page 2

• Manufacturer Part Number: IRF3710ZPBF
• Description: MOSFET N-CH 100V 59A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3710ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 59 A
• Gate Charge, Total: 82 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 160 W
• Resistance, Drain To Source On: 14 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 41 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 35 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 59 A
• Mounting Style: Through Hole
• Gate Charge Qg: 82 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3710ZPBF

V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static @ T
Diode Characteristics

‚
ƒ
„
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
2
V
Repetitive rating; pulse width limited by
R
I
Pulse width
max. junction temperature. (See fig. 11).
recommended for use above this value.
T
Limited by T
SD
DSS
eff.
J
G
= 25 , I
/ T
175°C.
35A, di/dt
J
AS
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Jmax
= 25°C (unless otherwise specified)
1.0ms; duty cycle
= 35A, V
, starting T
380A/µs, V
Parameter
GS
Parameter
=10V. Part not
J
™
DD
= 25°C, L = 0.27mH,
V
2%.
(BR)DSS
,
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
…
†
‡
ˆ
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
35
C
as C
Limited by T
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
oss
oss
eff. is a fixed capacitance that gives the same charging time
2900
1130
0.10
–––
–––
–––
–––
–––
–––
–––
290
150
170
280
–––
–––
–––
100
4.5
7.5
14
82
19
27
17
77
41
56
50
while V
Jmax
-200
–––
–––
–––
250
200
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
240
160
4.0
1.3
18
20
28
40
59
75
DS
, see Fig.12a, 12b, 15, 16 for typical repetitive
is rising from 0 to 80% V
2
Pak, when mounted on 1" square PCB
V/°C
m
nC
nH
nC
µA
nA
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 35A
= 35A
= 25°C, I
= 25°C, I
= 6.8
= 0V, I
= 10V, I
= V
= 50V, I
= 100V, V
= 100V, V
= 20V
= -20V
= 80V
= 10V
= 50V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
f
f
D
Conditions
Conditions
D
S
F
DS
D
D
DS
DS
= 250µA
= 250µA
= 35A, V
= 35A, V
= 35A
= 35A
GS
GS
= 0V to 80V
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
DSS
f
= 0V
= 0V, T
www.irf.com
.
D
f
= 1mA
GS
DD
G
J
= 25V
= 125°C
= 0V
G
f
S
D
S
D