IRF3710ZPBF International Rectifier, IRF3710ZPBF Datasheet - Page 5

• Manufacturer Part Number: IRF3710ZPBF
• Description: MOSFET N-CH 100V 59A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3710ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 59 A
• Gate Charge, Total: 82 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 160 W
• Resistance, Drain To Source On: 14 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 41 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 35 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 59 A
• Mounting Style: Through Hole
• Gate Charge Qg: 82 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3710ZPBF

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0.001
0.01
0.1
10
60
50
40
30
20
10
1
1E-006
0
Fig 9. Maximum Drain Current vs.
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.20
0.05
0.10
0.02
0.01
50
Case Temperature
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
100
125
0.0001
t 1 , Rectangular Pulse Duration (sec)
150
175
0.001
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig 10. Normalized On-Resistance
-60 -40 -20 0
I D = 59A
V GS = 10V
0.01
T J , Junction Temperature (°C)
vs. Temperature
20 40 60 80 100 120 140 160 180
0.1
5
1