STP40NF10L STMicroelectronics, STP40NF10L Datasheet
STP40NF10L
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STP40NF10L
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STP40NF10L Summary of contents
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... Switching application Order codes Part number STP40NF10L January 2007 N-channel 100V - 0.028Ω - 40A TO-220 Low gate charge STripFET™ Power MOSFET R I DS(on) D <0.033Ω 40A Internal schematic diagram Marking P40NF10L Rev 3 STP40NF10L TO-220 Package Packaging TO-220 Tube 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STP40NF10L . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...
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... STP40NF10L 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) E Single pulse avalanche energy AS T Storage temperature stg T Max. operating junction temperature j 1 ...
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... 80V Parameter Test conditions V = 50V 4.7Ω (see Figure 13 50V 4.7Ω (see Figure 13) Vclamp =80V 4.7Ω (see Figure 15) STP40NF10L Min. Typ 100 GS = 250µ 20A 0.028 D = 20A 0.030 Min. Typ. Max. I =20A 25 D 2300 290 125 46 = 40A Min. ...
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... STP40NF10L Table 6. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STP40NF10L ...
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... STP40NF10L Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 12. Normalized breakdown voltage vs. tj 7/12 ...
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... Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. Unclamped Inductive load test circuit Figure 18. Switching time waveform STP40NF10L ...
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... STP40NF10L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... STP40NF10L inch MIN. TYP. MAX. 0.173 0.181 0.024 0.034 0.045 0.066 0.019 0.027 0.60 0.620 0.393 0.409 0.094 0.106 0.194 0.202 0.048 0.052 ...
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... STP40NF10L 5 Revision history Table 7. Revision history Date 09-Sep-2004 17-Aug-2006 31-Jan-2007 Revision 1 First version. 2 The document has been reformatted. 3 Typo mistake on Table Revision history Changes 1. 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STP40NF10L ...