STP40NF10L STMicroelectronics, STP40NF10L Datasheet - Page 3

• Manufacturer Part Number: STP40NF10L
• Description: MOSFET N-CH 100V 40A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP40NF10L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 5V
• Input Capacitance (ciss) @ Vds: 2300pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.033 Ohms
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 17 V
• Continuous Drain Current: 40 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6741-5; STP40NF10L

STP40NF10L
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2. Starting T
Table 2.
R
Symbol
E
I
R
thj-case
DM
P
V
V
T
AS
thj-a
T
I
I
TOT
T
GS
DS
stg
D
D
l
j
(1)
(2)
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Drain-source voltage (v
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
j
= 25°C, I
Absolute maximum ratings
Thermal data
D
= 20A, V
DD
Parameter
=40V
C
= 25°C
gs
= 0)
C
C
= 25°C
= 100°C
– 65 to 175
Value
±17
62.5
100
160
150
430
175
300
40
25
1
1
Electrical ratings
°C/W
°C/W
W/°C
Unit
°C
mJ
°C
W
V
V
A
A
A
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