STF13NK50Z STMicroelectronics, STF13NK50Z Datasheet - Page 3

MOSFET N-CH 500V 11A TO-220FP

STF13NK50Z

Manufacturer Part Number
STF13NK50Z
Description
MOSFET N-CH 500V 11A TO-220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STF13NK50Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
480 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
1600pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
6.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.48 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7467-5
STF13NK50Z

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STx13NK50Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Symbol
Symbol
R
dv/dt
Symbol
I
P
R
V
thj-case
DM
SD
V
V
T
T
TOT
I
I
thj-a
T
E
ISO
GS
DS
stg
I
D
D
AR
J
l
AS
(2)
(3)
≤ 11 A, di/dt ≤ 200 A/µs, V
Drain-source voltage (V
Gate-source voltage
Drain current (continuous)
at T
Drain current (continuous)
at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS)
from all three leads to external heat sin
(t=1 s;T
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient
max
Maximum lead temperature for
soldering purpose
Absolute maximum ratings
Thermal data
Avalanche characteristics
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting T
C
C
=100 °C
= 25 °C
C
= 25 °C)
J
Parameter
= 25 °C, I
Parameter
DD
C
Parameter
= 25 °C
≤ 80% V
D
GS
= I
= 0)
AR
, V
(BR)DSS
DD
= 50 V)
TO-220
TO-220, TO-247
62.5
6.93
1.12
140
11
44
0.89
-55 to 150
Value
TO-247
Value
300
± 30
500
4.5
50
Value
240
TO-220FP
11
6.93
2500
11
44
0.24
TO-220FP
Electrical ratings
30
(1)
(1)
4.17
62.5
(1)
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
°C
mJ
W
°C
V
V
A
A
A
V
A
3/15

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