STF13NK50Z STMicroelectronics, STF13NK50Z Datasheet - Page 5

• Manufacturer Part Number: STF13NK50Z
• Description: MOSFET N-CH 500V 11A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STF13NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.48 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7467-5; STF13NK50Z

STx13NK50Z
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 9.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
I
V
SDM
I
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
GSO
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
(1)
Gate-source breakdown voltage
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Igs=±1 mA
(open drain)
I
I
di/dt = 100 A/µs,
V
Figure 21
I
di/dt = 100 A/µs,
V
Figure 21
SD
SD
SD
DD
DD
=11 A, V
=6.5 A,
=6.5 A,
Test conditions
Test conditions
=40 V, Tj=25 °C
=40 V, Tj=150 °C
GS
=0
Electrical characteristics
Min.
Min
30
Typ.
18.5
380
425
Typ.
3.4
3.9
18
Max
Max.
1.6
11
44
Unit
Unit
µC
µC
ns
ns
A
A
V
A
A
V
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