STF13NK50Z STMicroelectronics, STF13NK50Z Datasheet - Page 4

• Manufacturer Part Number: STF13NK50Z
• Description: MOSFET N-CH 500V 11A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STF13NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.48 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7467-5; STF13NK50Z

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
Table 7.
C
V
Symbol
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
t
t
C
I
increases from 0 to 80% V
I
C
C
GS(th)
DS(on)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
R
oss
oss eq.
t
t
rss
iss
gs
gd
r
f
g
g
(1)
(2)
= 25 °C unless otherwise specified)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
GS
Parameter
= 0)
DSS
V
V
V
V
V
V
Figure 20
f= 1 MHz open drain
I
V
V
T
V
V
V
D
DS
DS
GS
GS
DD
GS
C
DS
DS
GS
DS
GS
= 1 mA, V
V
R
Figure 19
=125 °C
=0
=0, V
=400 V, I
= V
= 10 V, I
=15 V, I
=25 V, f=1 MHz,
=10 V
= Max rating,
= Max rating,
= ± 20 V
DD
G
Test conditions
Test conditions
=4.7 Ω, V
Test conditions
=400 V, I
GS
DS
, I
D
D
=0 V to 400 V
D
GS
D
= 6.5 A
= 100 µA
= 6.5 A
= 13 A
= 0
GS
D
=6.5 A,
=10 V
Min.
Min.
500
Min.
3
1600
Typ.
Typ.
200
3.75
8.5
2.3
45
50
47
28
0.4
Typ.
9
18
23
61
24
oss
STx13NK50Z
Max.
Max.
0.48
when V
Max.
±
4.5
50
10
1
DS
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
µA
µA
µA
S
Ω
ns
ns
ns
ns
Ω
V
V