STP200N6F3 STMicroelectronics, STP200N6F3 Datasheet - Page 10

• Manufacturer Part Number: STP200N6F3
• Description: MOSFET N-CH 60V 120A TO220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP200N6F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.3 mOhms
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 120 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9096-5

Package mechanical data
4
10/16
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 15606 Rev 2
STB200N6F3, STI200N6F3, STP200N6F3
®