STP200N6F3 STMicroelectronics, STP200N6F3 Datasheet - Page 7

• Manufacturer Part Number: STP200N6F3
• Description: MOSFET N-CH 60V 120A TO220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP200N6F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.3 mOhms
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 120 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9096-5

STB200N6F3, STI200N6F3, STP200N6F3
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
(norm)
BV
1.00
0.98
0.95
1.03
0.92
1.06
V
(V)
DSS
12
10
GS
6
4
2
8
0
-50
0
Normalized B
vs temperature
-25
20
V
I
0
DD
D
40
=120A
=30V
25
60
VDSS
50
80
75
vs temperature
100
100
120
T
J
Doc ID 15606 Rev 2
(°C)
Q
AM00897v1
AM05520v1
g
(nC)
Figure 9.
Figure 13. Normalized on resistance vs
R
14010
12010
10010
8010
6010
4010
2010
DS(on)
(mΩ)
3.20
3.10
3.05
3.25
3.15
3.00
(pF)
10
C
0
0
Crss
Static drain-source on resistance
temperature
10
10
20
20
30
Electrical characteristics
30
40
40
50
50
60
V
DS
AM05521v1
AM05519v1
I
D
(V)
(A)
Ciss
Coss
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