STP11NM80 STMicroelectronics, STP11NM80 Datasheet - Page 2

• Manufacturer Part Number: STP11NM80
• Description: MOSFET N-CH 800V 11A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP11NM80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 43.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1630pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4369-5

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80
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Table 3: Absolute Maximum ratings
(
(*) Limited only by the Maximum Temperature Allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
) Pulse width limited by safe operating area
Rthj-case
Rthj-amb
Symbol
Symbol
I
V
DM
P
V
V
E
T
I
DGR
TOT
I
I
T
AR
T
DS
GS
stg
AS
D
D
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
j
= 25 °C, I
Parameter
Parameter
D
C
GS
= 2.5A, V
= 25°C
GS
j
= 20 k )
max)
= 0)
C
C
DD
= 25°C
= 100°C
= 50 V)
TO-220/D
TO-220/D
TO-247
TO-247
0.83
150
4.7
1.2
11
44
2
PAK
2
Max Value
PAK
-65 to 150
Value
± 30
62.5
800
800
300
400
2.5
TO-220FP
TO-220FP
4.7 (*)
11 (*)
44 (*)
3.6
0.28
35
W /°C
°C/W
°C/W
Unit
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
A