STP11NM80 STMicroelectronics, STP11NM80 Datasheet - Page 2
![MOSFET N-CH 800V 11A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP11NM80
Manufacturer Part Number
STP11NM80
Description
MOSFET N-CH 800V 11A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Specifications of STP11NM80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
43.6nC @ 10V
Input Capacitance (ciss) @ Vds
1630pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
11A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4369-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP11NM80
Manufacturer:
ST
Quantity:
12 000
Part Number:
STP11NM80
Manufacturer:
ST
Quantity:
20 000
STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80
2/14
Table 3: Absolute Maximum ratings
(
(*) Limited only by the Maximum Temperature Allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
) Pulse width limited by safe operating area
Rthj-case
Rthj-amb
Symbol
Symbol
I
V
DM
P
V
V
E
T
I
DGR
TOT
I
I
T
AR
T
DS
GS
stg
AS
D
D
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
j
= 25 °C, I
Parameter
Parameter
D
C
GS
= 2.5A, V
= 25°C
GS
j
= 20 k )
max)
= 0)
C
C
DD
= 25°C
= 100°C
= 50 V)
TO-220/D
TO-220/D
TO-247
TO-247
0.83
150
4.7
1.2
11
44
2
PAK
2
Max Value
PAK
-65 to 150
Value
± 30
62.5
800
800
300
400
2.5
TO-220FP
TO-220FP
4.7 (*)
11 (*)
44 (*)
3.6
0.28
35
W /°C
°C/W
°C/W
Unit
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
A