STP11NM80 STMicroelectronics, STP11NM80 Datasheet - Page 8
![MOSFET N-CH 800V 11A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP11NM80
Manufacturer Part Number
STP11NM80
Description
MOSFET N-CH 800V 11A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Specifications of STP11NM80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
43.6nC @ 10V
Input Capacitance (ciss) @ Vds
1630pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
11A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4369-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP11NM80
Manufacturer:
ST
Quantity:
12 000
Part Number:
STP11NM80
Manufacturer:
ST
Quantity:
20 000
STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80
8/14
DIM.
L20
L30
H1
øP
b1
e1
J1
L1
D
Q
A
b
c
E
e
F
L
15.25
MIN.
4.40
0.61
1.15
0.49
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
10
13
TO-220 MECHANICAL DATA
16.40
28.90
mm.
TYP
MAX.
15.75
10.40
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.173
0.024
0.045
0.019
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
MIN.
0.60
0.645
1.137
TYP.
inch
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116