STP11NM80 STMicroelectronics, STP11NM80 Datasheet - Page 3
![MOSFET N-CH 800V 11A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP11NM80
Manufacturer Part Number
STP11NM80
Description
MOSFET N-CH 800V 11A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Specifications of STP11NM80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
43.6nC @ 10V
Input Capacitance (ciss) @ Vds
1630pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
11A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4369-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP11NM80
Manufacturer:
ST
Quantity:
12 000
Part Number:
STP11NM80
Manufacturer:
ST
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (T
Table 6: On/Off
Table 7: Dynamic
Table 8: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
Symbol
I
R
V
V
SDM
(BR)DSS
g
t
t
I
I
I
C
SD
I
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
fs
RRM
RRM
DSS
GSS
R
I
2. Pulse width limited by safe operating area.
Q
Q
Q
SD
t
t
oss
t
t
iss
rss
rr
rr
gs
gd
r
f
(1)
G
g
rr
rr
(1)
(2)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80
CASE
I
V
V
V
V
V
V
I
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
V
R
(Resistive Load see, Figure 4)
V
V
I
I
V
(see test circuit, Figure 5)
I
V
(see test circuit, Figure 5)
V
D
D
SD
SD
SD
DS
DS
GS
DS
GS
DS
DD
DD
GS
DD
DD
G
DS
= 250 µA, V
= 7.5 A
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 11 A, V
= 11 A, di/dt = 100 A/µs
= 11 A, di/dt = 100 A/µs
= Max Rating
= Max Rating, T
= ± 30V
= V
= 10V, I
> I
= 400 V, I
= 640 V, I
= 10V
= 50 V, T
= 50 V, T
= 25 V, f = 1 MHz, V
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
V
x R
D
D
GS
GS
j
j
=5.5 A
D
D
GS
= 250 µA
= 25°C
= 150°C
DS(on)max,
= 10 V
= 5.5 A
= 11 A,
= 0
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
800
3
11.25
1630
Typ.
Typ.
Typ.
0.35
43.6
7.22
23.6
23.2
11.6
750
612
970
2.7
30
22
17
46
15
21
4
8
Max.
Max.
Max.
0.40
0.86
100
100
10
44
11
5
Unit
Unit
Unit
µC
µC
µA
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
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