TPCP8002(TE85L,F,M Toshiba, TPCP8002(TE85L,F,M Datasheet - Page 3

MOSFET N-CH 20V 9.1A PS8

TPCP8002(TE85L,F,M

Manufacturer Part Number
TPCP8002(TE85L,F,M
Description
MOSFET N-CH 20V 9.1A PS8
Manufacturer
Toshiba
Datasheet

Specifications of TPCP8002(TE85L,F,M

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 4.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9.1A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
48nC @ 5V
Input Capacitance (ciss) @ Vds
3700pF @ 10V
Power - Max
840mW
Mounting Type
Surface Mount
Package / Case
2-3V1K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TPCP8002(TE85L,F)
TPCP8002TE85LFMTR
TPCP8002TE85LFTR
TPCP8002TE85LFTR
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
|Y
C
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
GS
= 10 mA, V
= 10 mA, V
3
= 9.1 A, V
(Ta = 25°C)
= 20 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±10 V, V
= 2.5 V, I
= 4.5 V, I
≈ 16 V, V
5 V
0 V
Test Condition
Test Condition
w
D
D
GS
GS
D
D
GS
GS
GS
GS
= 10 µs
= 0.2 mA
= 4.5 A
DS
= 4.5 A
= 4.5 A
= 0 V
= −12 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 5 V, I
V
= 0 V
I
D
DD
= 4.5 A
∼ − 10 V
D
= 9.1 A
V
OUT
Min
Min
0.5
20
18
8
3700
Typ.
Typ.
400
450
110
10
36
14
24
30
48
12
7
8
TPCP8002
2007-01-16
−1.2
Max
13.7
Max
36.4
±10
1.2
10
10
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V

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