TPCP8002(TE85L,F,M Toshiba, TPCP8002(TE85L,F,M Datasheet - Page 6

• Manufacturer Part Number: TPCP8002(TE85L,F,M
• Description: MOSFET N-CH 20V 9.1A PS8
• Manufacturer: Toshiba

Specifications of TPCP8002(TE85L,F,M

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9.1A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 3700pF @ 10V
• Power - Max: 840mW
• Mounting Type: Surface Mount
• Package / Case: 2-3V1K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCP8002(TE85L,F); TPCP8002TE85LFMTR; TPCP8002TE85LFTR; TPCP8002TE85LFTR

100
0.1
10
1
0.1
*: Single nonrepetitive pulse
1000.0
I D max (pulse)*
Curves must be derated
linearly with increase in
temperature.
Ta = 25°C
100.0
10.0
1.0
0.1
Drain−source voltage V
0.001
Safe operating area
1
10 ms*
0.01
10
1 ms*
DS
V DSS max
0.1
(V)
Pulse width t
Device mounted on a glass-
epoxy board (b) (Note 2b)
100
r
th(j−c)
6
1
− t
w
w
(s)
Device mounted on a glass-
epoxy board (a) (Note 2a)
10
100
Single pulse
1000
TPCP8002
2007-01-16