TK15J60U(F) Toshiba, TK15J60U(F) Datasheet

TK15J60U(F)

Manufacturer Part Number

TK15J60U(F)

Description

MOSFET N-CH 600V 15A TO-3P

Manufacturer

Toshiba

Datasheet

1.TK15J60UF.pdf (6 pages)

Specifications of TK15J60U(F)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

300 mOhm @ 7.5A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

15A

Vgs(th) (max) @ Id

5V @ 1mA

Gate Charge (qg) @ Vgs

17nC @ 10V

Input Capacitance (ciss) @ Vds

950pF @ 10V

Power - Max

170W

Mounting Type

Through Hole

Package / Case

TO-3P

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.3 Ohms

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

15 A

Power Dissipation

170 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

TK15J60U(F)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TK15J60U(F)

Manufacturer:

TOS

Quantity:

2 522

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Switching Regulator Applications

•

Absolute Maximum Ratings

Thermal Characteristics

This transistor is an electrostatic sensitive device. Please handle with caution.

Low drain-source ON resistance: R

High forward transfer admittance: ⎪Y

Low leakage current: I

Enhancement-mode: V

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability

data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)

Characteristics

= 90 V, T

Pulse (t = 1 ms)

DSS

= 25°C (initial), L = 0.63 mH, R

= 3.0~5.0 V (V

(Note 1)

(Note 2)

(Note 3)

= 100 μA (V

DS (ON)

(Ta = 25°C)

Symbol

TK15J60U

GSS

DSS

⎪ = 8.5 S (typ.)

stg

Symbol

th (ch-a)

th (ch-c)

= 10 V, I

= 0.24Ω (typ.)

= 600 V)

−55 to 150

Rating

600

±30

170

150

= 1 mA)

0.735

Max

= 25Ω, I

Unit

°C/W

°C

Unit

= 15 A

Weight : 4.6 g (typ.)

JEDEC

JEITA

TOSHIBA

1.0

5.45 ± 0.2

2.0 ± 0.3

＋0.3

−0.25

1. Gate

2. Drain(heat sink)

3. Source

15.9 MAX.

5.45 ± 0.2

2-16C1B

SC-65

TK15J60U

Ф3.2 ± 0.2

2008-06-11

⎯

Unit: mm

Related parts for TK15J60U(F)

TK15J60U(F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i ...

Page 2

... Source-Drain Ratings and Characteristics Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Marking TOSHIBA K15J60U Part No. (or abbreviation code) Lot No. A line indicates Lead (Pb)-Free (Ta = 25°C) Symbol Test Condition = ± ...

Page 3

I – Common source Tc = 25° Pulse test 5 Drain−source voltage V ( – V ...

Page 4

R – (ON) 1 Common source Pulse test 0.8 7.5 0 0.4 0.2 0 −80 − 120 Case temperature Tc (°C) C – V ...

Page 5

Duty=0.5 0.2 0.1 0.05 0.1 Single pulse 0.01 0.02 0.01 10μ 100μ Safe operating area 100 100 µ max (Pulse max (Continuous operation Tc = 25°C 1 0.1 * Single ...

Page 6

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

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