TK15J60U(F) Toshiba, TK15J60U(F) Datasheet - Page 3

• Manufacturer Part Number: TK15J60U(F)
• Description: MOSFET N-CH 600V 15A TO-3P
• Manufacturer: Toshiba

Specifications of TK15J60U(F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 10V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TK15J60U(F)

100
10
0.1
10
30
24
18
12
8
6
4
2
0
1
6
0
0.1
0
0
Common source
Tc = 25°C
Pulse test
Common source
V DS = 20 V
Pulse test
Common source
V DS = 10 V
Pulse test
Drain−source voltage V
Gate−source voltage V
1
2
Drain current I
15
10
1
2
4
⎪Y
I
I
D
D
25
Tc = −55°C
8
fs
– V
– V
⎪ − I
DS
GS
100
D
3
6
D
25
10
Tc = −55°C
GS
(A)
DS
100
7
V GS = 5.8 V
4
8
(V)
(V)
6.5
6.8
6.2
6
100
10
5
3
0.01
30
24
18
12
0.1
10
10
6
0
8
6
2
0
4
1
0
0
1
Common source
Tc = 25°C
Pulse test
15
10
Drain−source voltage V
Gate−source voltage V
10
4
Drain current I
R
20
V
8
DS (ON)
V GS = 10 V
I
DS
D
– V
10
– V
DS
GS
− I
30
12
D
15
8.5
I D = 15A
7.5
D
4
GS
(A)
DS
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
V GS = 6.2 V
16
40
(V)
(V)
TK15J60U
2008-06-11
7.5
8
6.3
7
100
50
20