BSH202,215 NXP Semiconductors, BSH202,215 Datasheet - Page 2

• Manufacturer Part Number: BSH202,215
• Description: MOSFET P-CH 30V 520MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSH202,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 900 mOhm @ 280mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 520mA
• Vgs(th) (max) @ Id: 1.9V @ 1mA
• Gate Charge (qg) @ Vgs: 2.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 80pF @ 24V
• Power - Max: 417mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.52 A
• Power Dissipation: 417 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054718215; BSH202 T/R; BSH202 T/R

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
August 1998
P-channel enhancement mode
MOS transistor
SYMBOL PARAMETER
V
V
R
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
j
j
SYMBOL PARAMETER
I
I
V
t
Q
= 25˚C unless otherwise specified
GSS
DSS
d on
r
d off
f
DR
DRM
rr
= 25˚C unless otherwise specified
fs
(BR)DSS
GS(TO)
DS(ON)
iss
oss
rss
SD
g(tot)
gs
gd
rr
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Input capacitance
Output capacitance
Feedback capacitance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
V
V
V
V
V
V
V
I
V
V
Resistive load
V
D
GS
DS
GS
GS
GS
DS
GS
DS
DD
GS
GS
= -0.3 A; V
CONDITIONS
T
I
I
V
= 0 V; I
= V
= -10 V; I
= -4.5 V; I
= -10 V; I
= -24 V; I
= 20 V; V
= -24 V; V
= -15 V; I
= -10 V; R
= 0 V; V
F
F
a
GS
= -0.5 A; V
= -0.5 A; -dI
= 25 ˚C
GS
= 0 V; V
; I
D
D
DS
DD
= -10 A
= -1 mA
D
D
D
D
D
GS
G
2
DS
= -24 V; f = 1 MHz
= -280 mA
= -280 mA
= -280 mA; T
= -0.5 A;
= -15 V; V
= -140 mA
= 6
R
= 0 V;
GS
= 0 V
= -24 V
F
/dt = 100 A/ s;
= 0 V
GS
= -10 V
j
= 150˚C
T
T
j
j
= 150˚C
= 150˚C
MIN.
-
-
-
-
-
MIN.
-0.4
-30
0.2
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.87
TYP.
30
28
TYP. MAX. UNIT
0.63
0.89
0.95
-
-
Product specification
-1.9
-0.4
-50
0.7
2.9
0.4
0.5
4.5
45
20
80
27
10
2
9
-
-
MAX.
-0.56
-2.2
-1.3
1.35
1.35
-100
-10
0.9
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BSH202
Rev 1.000
UNIT
nC
ns
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
A
V
V
V
V
S
A