BSH202,215 NXP Semiconductors, BSH202,215 Datasheet - Page 5

• Manufacturer Part Number: BSH202,215
• Description: MOSFET P-CH 30V 520MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSH202,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 900 mOhm @ 280mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 520mA
• Vgs(th) (max) @ Id: 1.9V @ 1mA
• Gate Charge (qg) @ Vgs: 2.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 80pF @ 24V
• Power - Max: 417mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.52 A
• Power Dissipation: 417 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054718215; BSH202 T/R; BSH202 T/R

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-14
-12
-10
-8
-6
-4
-2
0
0
Gate-source voltage, VGS (V)
RD = 50 Ohms
VDD = 15 V
Tj = 25 C
1
Gate charge, (nC)
V
GS
= f(Q
2
G
)
3
BSH202
4
5
3.5
2.5
1.5
0.5
I
4
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
); conditions: V
0.5
Drain-Source Voltage, VSDS (V)
150 C
1
GS
Tj = 25 C
= 0 V; parameter T
Product specification
1.5
BSH202
BSH202
Rev 1.000
2
j